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DCR1478SY
DCR1478SY
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS4646-5. DS4646-6.0 July 2001
FEATURES
s s s s
KEY PARAMETERS VDRM IT(AV) ITSM dVdt dI/dt 4800V 2073A 27500A 1000V/s 300A/s
Double Side Cooling High Surge Capability High Mean Current Fatigue Free
APPLICATIONS
s s s
High Power Drives High Voltage Power Supplies DC Motor Control
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 4800 4700 4600 4500 4400 Conditions
DCR1478SY48 DCR1478SY47 DCR1478SY46 DCR1478SY45 DCR1478SY44
Tvj = 0 to 125C, IDRM = IRRM = 250mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Outline type code: Y See Package Details for further information.
(The DCR1478 is also available in a thin package, type code V. Please contact Customer Services for more information).
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1478SY48 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
Fig. 1 Package outline
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DCR1478SY
CURRENT RATINGS
Tcase = 60C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load, Tcase = 80oC Tcase = 80oC Tcase = 80oC 2073 3257 2954 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load, Tcase = 80oC Tcase = 80oC Tcase = 80oC 1340 2105 1759 A A A
CURRENT RATINGS
Tcase = 80C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load, Tcase = 80oC Tcase = 80oC Tcase = 80oC 1625 2550 2270 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load, Tcase = 80oC Tcase = 80oC Tcase = 80oC 1050 1650 1450 A A A
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DCR1478SY
SURGE RATINGS
Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 22.0 2.42 x 106 27.5 3.78 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 43.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 38.0 125 125 47.0
o
Min. dc Anode dc -
Max. 0.0095 0.019 0.019 0.002 0.004 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
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DCR1478SY
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. From 67% VDRM to 1000A Gate source 20V, 10 tr 0.5s to 1A, Tj = 125oC At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 30V, 15 tr 0.5s, Tj = 25oC Tj = 25oC, VD = 5V Tj = 25oC, Rg-k = I = 1000A, t = 1ms, Tj = 125oC, V = 50V, dI/dt = 20A/s, VDR = 67% VDRM, dVDR/dt = 8V/s linear Repetitive 50Hz Non-repetitive Typ. 300 500 Max. 250 1000 100 300 1.4 0.31 2.5 1000 500 Units mA V/s A/s A/s V m s mA mA s
dI/dt
Rate of rise of on-state current
VT(TO) rT tgd IL IH tq
Threshold voltage On-state slope resistance Delay time Latching current Holding current Turn-off time
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, gate characteristics curve Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 4.0 400 0.25 30 0.25 5 30 150 10 Units V mA V V V V A W W
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DCR1478SY
CURVES
6000 Measured under pulse conditions Tj = 125C 5000 Instantaneous on-state current, IT - (A)
Mean power dissipation - (W)
6000 Half wave 3 phase 6 phase 5000 7000 d.c.
4000
4000
3000
3000
2000
2000
1000
1000
0 0.5
1.0 1.5 2.5 2.0 3.0 Instantaneous on-state voltage, VT - (V)
3.5
0 0
1000 2000 3000 Mean on-state current, IT(AV) - (A)
4000
Fig.2 Maximum (limit) on-state characteristics VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT Where A = 1.388814 B = -0.06683276 C = 2.002455 x 10-4 D = 1.589376 x 10-2 these values are valid for Tj = 125C for IT 500A to 6000A
Fig.3 Dissipation curves
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DCR1478SY
100000
IT QS tp dI/dt IRM
100 Table gives pulse power PGM in Watts
Pulse width s 100 200 500 1ms 10ms Pulse frequency Hz 50 100 400 150 150 150 150 150 125 150 150 100 150 100 25 20 -
VFGM
Total stored charge, QS - (C)
Gate trigger voltage, VGT - (V)
10
100W 50W 20W 10W 5W 2W
IT = 1400A
10000
1
Low
er li
mit
1%
Conditions: QS is total integral stored charge Tj = 125C 1000 0.1 1.0 10 Rate of decay of on-state current, dI/dt - (A/s) 100 0.1 0.001 0.01 0.1 1 Gate trigger current, IGT - (A) 10
Fig.4 Stored charge
50
Fig.5 Gate characteristics
0.1
Tj = 125C
Up
Tj = 25C Tj = -40C
pe
im rl
it 9
9%
I2t = I2 x t 2
Peak half sine wave on-state current - (kA)
Anode side cooled
40
Thermal impedance - (C/W)
0.01 Double side cooled
30
2.5
I2t value - (A2s x 106)
20
I2t
2.0
0.001
Conduction
Effective thermal resistance Junction to case C/W Double side 0.0095 0.0105 0.0112 0.0139 Anode side 0.019 0.020 0.0207 0.0234
10
1.5
d.c. Halfwave 3 phase 120 6 phase 60
0.0001 0.001
0.01
0.1 1 Time - (s)
10
100
0 1 ms
10
1
2 3 45
10
1.0 20 30 50
Cycles at 50Hz Duration
Fig.6 Transient thermal impedance - junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRSM at Tcase = 125C)
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DCR1478SY
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Hole O3.6 x 2.0 deep (One in each electrode)
Cathode tab
Cathode O112.5 max O73 nom O1.5 Gate O73 nom
Anode
Nominal weight: 1600g Clamping force: 43kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: Y
(The DCR1478 is also available in a thin package, type code V. Please contact Customer Services for more information).
37.7 36.0
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DCR1478SY
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4646-6 Issue No. 6.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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